| PART |
Description |
Maker |
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| X00136 |
HIGH ENERGY NPN TRANSISTORS 350 VOLTS
|
Solid States Devices, Inc
|
| MJ10000 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS
|
Motorola, Inc
|
| GSRU10030 GSRU10035 GSRU10040 |
NPN 300, 350, 400V 10 AMP SWITCHING
|
New Jersey Semi-Conductor Products, Inc.
|
| RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| SFT4300 |
2 AMP 150 VOLTS NPN TRANSISTOR
|
SSDI[Solid States Devices, Inc]
|
| SFT8500 |
2 AMP HIGH VOLTAGE NPN TRANSISTOR 1000 VOLTS
|
SSDI[Solid States Devices, Inc]
|
| SFT504 SFT502 |
5 AMP 200 Volts HIGH SPEED NPN Transistor
|
SSDI[Solid States Devices, Inc]
|
| SFT2010 SFT2012 SFT2012_3 SFT2010-3 SFT2010_3 SFT2 |
200 AMP 100-140 VOLTS NPN TRANSISTOR
|
Solid States Devices, Inc
|
| 2N5097 2N5095 |
1 AMP HIGH VOLTAGE NPN TRANSISTOR 500-600 VOLTS
|
SSDI[Solid States Devices, Inc]
|
| SFT6340 SFT6341 SFT6338 SFT6339 |
25 AMP 100 - 150 VOLTS NPN HIGH SPEED POWER TRANSISTOR
|
SSDI[Solid States Devices, Inc]
|
